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1 p/n:pm0866 rev. 3.3, mar. 08, 2002 mx29lv160t/b & mx29lv160at/ab 16m-bit [2mx8/1mx16] cmos single voltage 3v only flash memory ? ready/busy pin (ry/by) - provides a hardware method of detecting program or erase operation completion. ? sector protection - hardware method to disable any combination of sectors from program or erase operations - temporary sector unprotect allows code changes in previously locked sectors. ? cfi (common flash interface) compliant (for mx29lv160at/bt) - flash device parameters stored on the device and provide the host system to access ? 100,000 minimum erase/program cycles ? latch-up protected to 100ma from -1v to vcc+1v ? boot sector architecture - t = top boot sector - b = bottom boot sector ? low vcc write inhibit is equal to or less than 2.3v ? package type: - 44-pin sop - 48-pin tsop - 48-ball csp (8x13mm:for mx29lv160t/b; 6x8mm: for mx29lv160at/bt) ? compatibility with jedec standard - pinout and software compatible with single-power supply flash features ? extended single - supply voltage range 2.7v to 3.6v ? 2,097,152 x 8/1,048,576 x 16 switchable ? single power supply operation - 3.0v only operation for read, erase and program operation ? fast access time: 70/90ns ? low power consumption - 20ma maximum active current - 0.2ua typical standby current ? command register architecture - byte/word programming (9us/11us typical) - sector erase (sector structure 16k-bytex1, 8k-bytex2, 32k-bytex1, and 64k-byte x31) ? auto erase (chip & sector) and auto program - automatically erase any combination of sectors with erase suspend capability. - automatically program and verify data at specified address ? erase suspend/erase resume - suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase. ? status reply - data polling & toggle bit for detection of program and erase operation completion. general description the mx29lv160t/b & mx29lv160at/ab is a 16-mega bit flash memory organized as 2m bytes of 8 bits or 1m words of 16 bits. mxic's flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. the mx29lv160t/b & mx29lv160at/ ab is packaged in 44-pin sop, 48-pin tsop and 48-ball csp. it is designed to be reprogrammed and erased in system or in standard eprom programmers. the standard mx29lv160t/b & mx29lv160at/ab of- fers access time as fast as 70ns, allowing operation of high-speed microprocessors without wait states. to elimi- nate bus contention, the mx29lv160t/b & mx29lv160at/ab has separate chip enable (ce) and output enable (oe) controls. mxic's flash memories augment eprom functionality with in-circuit electrical erasure and programming. the mx29lv160t/b & mx29lv160at/ab uses a command register to manage this functionality. the command reg- ister allows for 100% ttl level control inputs and fixed power supply levels during erase and programming, while maintaining maximum eprom compatibility. mxic flash technology reliably stores memory contents even after 100,000 erase and program cycles. the mxic cell is designed to optimize the erase and programming mechanisms. in addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cy- cling. the mx29lv160t/b & mx29lv160at/ab uses a 2.7v~3.6v vcc supply to perform the high reliability erase and auto program/erase algorithms. the highest degree of latch-up protection is achieved with mxic's proprietary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. part name difference mx29lv160t/b 1) without cfi compliant 2)csp dimension:8x13mm mx29lv160at/ab 1) with cfi compliant 2)csp dimension:6x8mm
2 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 pin configurations pin description symbol pin name a0~a19 address input q0~q14 data input/output q15/a-1 q15(word mode)/lsb addr(byte mode) ce chip enable input we write enable input byte word/byte selection input reset hardware reset pin/sector protect unlock oe output enable input ry/by ready/busy output vcc power supply pin (2.7v~3.6v) gnd ground pin 48 tsop (standard type) (12mm x 20mm) 44 sop(500 mil) abcdef gh 6 a13 a12 a14 a15 a16 byte q15/a-1 gnd 5 a9 a8 a10 a11 q7 q14 q13 q6 4 we reset nc a19 q5 q12 vcc q4 3 ry/by nc a18 nc q2 q10 q11 q3 2 a7 a17 a6 a5 q0 q8 q9 q1 1a3a4a2a1a0ceoegnd 48-ball csp (ball pitch=0.8mm) top view, balls facing down (8x13mm for mx29lv160t/b; 6x8mm for mx29lv160at/ab) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 reset a18 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce gnd oe q0 q8 q1 q9 q2 q10 q3 q11 we a19 a8 a9 a10 a11 a12 a13 a14 a15 a16 byte gnd q15/a-1 q7 q14 q6 q13 q5 q12 q4 vcc mx29lv160t/b, mx29lv160at/ab a15 a14 a13 a12 a11 a10 a9 a8 a19 nc we reset nc nc ry/by a18 a17 a7 a6 a5 a4 a3 a2 a1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 a16 byte gnd q15/a-1 q7 q14 q6 q13 q5 q12 q4 vcc q11 q3 q10 q2 q9 q1 q8 q0 oe gnd ce a0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 mx29lv160t/b, mx29lv160at/ab
3 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 block structure sector sector size address range sector address byte mode word mode byte mode(x8) word mode(x16) a19 a18 a17 a16 a15 a14 a13 a12 sa0 64kbytes 32kwords 000000-00ffff 00000-07fff 00000xx x sa1 64kbytes 32kwords 010000-01ffff 08000-0ffff 00001xx x sa2 64kbytes 32kwords 020000-02ffff 10000-17fff 00010xx x sa3 64kbytes 32kwords 030000-03ffff 18000-1ffff 00011xx x sa4 64kbytes 32kwords 040000-04ffff 20000-27fff 00100xx x sa5 64kbytes 32kwords 050000-05ffff 28000-2ffff 00101xx x sa6 64kbytes 32kwords 060000-06ffff 30000-37fff 00110xx x sa7 64kbytes 32kwords 070000-07ffff 38000-3ffff 00111xx x sa8 64kbytes 32kwords 080000-08ffff 40000-47fff 01000xx x sa9 64kbytes 32kwords 090000-09ffff 48000-4ffff 01001xx x sa10 64kbytes 32kwords 0a0000-0affff 50000-57fff 01010xx x sa11 64kbytes 32kwords 0b0000-0bffff 58000-5ffff 01011xx x sa12 64kbytes 32kwords 0c0000-0cffff 60000-67fff 01100xx x sa13 64kbytes 32kwords 0d0000-0dffff 68000-6ffff 01101xx x sa14 64kbytes 32kwords 0e0000-0effff 70000-77fff 01110xx x sa15 64kbytes 32kwords 0f0000-0fffff 78000-7ffff 01111xx x sa16 64kbytes 32kwords 100000-10ffff 80000-87fff 10000xx x sa17 64kbytes 32kwords 110000-11ffff 88000-8ffff 10001xx x sa18 64kbytes 32kwords 120000-12ffff 90000-97fff 10010xx x sa19 64kbytes 32kwords 130000-13ffff 98000-9ffff 10011xx x sa20 64kbytes 32kwords 140000-14ffff a0000-a7fff 10100xx x sa21 64kbytes 32kwords 150000-15ffff a8000-affff 10101xx x sa22 64kbytes 32kwords 160000-16ffff b0000-b7fff 10110xx x sa23 64kbytes 32kwords 170000-17ffff b8000-bffff 10111xx x sa24 64kbytes 32kwords 180000-18ffff c0000-c7fff 11000xx x sa25 64kbytes 32kwords 190000-19ffff c8000-cffff 11001xx x sa26 64kbytes 32kwords 1a0000-1affff d0000-d7fff 11010xx x sa27 64kbytes 32kwords 1b0000-1bffff d8000-dffff 11011xx x sa28 64kbytes 32kwords 1c0000-1cffff e0000-e7fff 11100xx x sa29 64kbytes 32kwords 1d0000-1dffff e8000-effff 11101xx x sa30 64kbytes 32kwords 1e0000-1effff f0000-f7fff 11110xx x sa31 32kbytes 16kwords 1f0000-1f7fff f8000-fbfff 111110x x sa32 8kbytes 4kwords 1f8000-1f9fff fc000-ecfff 1111110 0 sa33 8kbytes 4kwords 1fa000-1fbfff fd000-fdfff 1111110 1 sa34 16kbytes 8kwords 1fc000-1fffff fe000-fffff 1111111 x table 1: mx29lv160at sector architecture note: byte mode: address range a19:a-1, word mode:address range a19:a0.
4 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 sector sector size address range sector address byte mode word mode byte mode (x8) word mode (x16) a19 a18 a17 a16 a15 a14 a13 a12 sa0 16kbytes 8kwords 000000-003fff 00000-01fff 0000000 x sa1 8kbytes 4kwords 004000-005fff 02000-02fff 0000001 0 sa2 8kbytes 4kwords 006000-007fff 03000-03fff 0000001 1 sa3 32kbytes 16kwords 008000-00ffff 04000-07fff 000001x x sa4 64kbytes 32kwords 010000-01ffff 08000-0ffff 00001xx x sa5 64kbytes 32kwords 020000-02ffff 10000-17fff 00010xx x sa6 64kbytes 32kwords 030000-03ffff 18000-1ffff 00011xx x sa7 64kbytes 32kwords 040000-04ffff 20000-27fff 0 1 0 x sa8 64kbytes 32kwords 050000-05ffff 28000-2ffff 0101xx sa9 64kbytes 32kwords 060000-06ffff 30000-37fff 00110xx x sa10 64kbytes 32kwords 070000-07ffff 38000-3ffff 00111xx x sa11 64kbytes 32kwords 080000-08ffff 40000-47fff 01000xx x sa12 64kbytes 32kwords 090000-09ffff 48000-4ffff 01001xx x sa13 64kbytes 32kwords 0a0000-0affff 50000-57fff 01010xx x sa14 64kbytes 32kwords 0b0000-0bffff 58000-5ffff 01011xx x sa15 64kbytes 32kwords 0c0000-0cffff 60000-67fff 01100xx x sa16 64kbytes 32kwords 0d0000-0dffff 68000-6ffff 01101xx x sa17 64kbytes 32kwords 0e0000-0effff 70000-77fff 01110xx x sa18 64kbytes 32kwords 0f0000-0fffff 78000-7ffff 01111xx x sa19 64kbytes 32kwords 100000-10ffff 80000-87fff 10000xx x sa20 64kbytes 32kwords 110000-11ffff 88000-8ffff 10001xx x sa21 64kbytes 32kwords 120000-12ffff 90000-97fff 10010xx x sa22 64kbytes 32kwords 130000-13ffff 98000-9ffff 10011xx x sa23 64kbytes 32kwords 140000-14ffff a0000-a7fff 10100xx x sa24 64kbytes 32kwords 150000-15ffff a8000-affff 10101xx x sa25 64kbytes 32kwords 160000-16ffff b0000-b7fff 10110xx x sa26 64kbytes 32kwords 170000-17ffff b8000-bffff 10111xx x sa27 64kbytes 32kwords 180000-18ffff c0000-c7fff 11000xx x sa28 64kbytes 32kwords 190000-19ffff c8000-cffff 11001xx x sa29 64kbytes 32kwords 1a0000-1affff d0000-d7fff 11010xx x sa30 64kbytes 32kwords 1b0000-1bffff d8000-dffff 11011xx x sa31 64kbytes 32kwords 1c0000-1cffff e0000-e7fff 11100xx x sa32 64kbytes 32kwords 1d0000-1dffff e8000-effff 11101xx x sa33 64kbytes 32kwords 1e0000-1effff f0000-fffff 11110xx x sa34 64kbytes 32kwords 1f0000-1fffff f8000-fffff 11111xx x table 2: mx29lv160ab sector architecture note: byte mode:address range a19:a-1, word mode:address range a19:a0.
5 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 block diagram control input logic program/erase high voltage write s tat e machine (wsm) s tat e register flash array x-decoder address latch and buffer y-pass gate y-decoder array source hv command data decoder command data latch i/o buffer pgm data hv program data latch sense amplifier q0-q15/a-1 a0-a19 ce oe we reset
6 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 automatic programming the mx29lv160t/b & mx29lv160at/ab is byte pro- grammable using the automatic programming algorithm. the automatic programming algorithm makes the ex- ternal system do not need to have time out sequence nor to verify the data programmed. the typical chip pro- gramming time at room temperature of the mx29lv160t/ b & mx29lv160at/ab is less than 10 seconds. automatic programming algorithm mxic's automatic programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and a0h) and a program command (program data and address). the device automatically times the programming pulse width, provides the pro- gram verification, and counts the number of sequences. the device provides an unlock bypass mode with faster programming. only two write cycles are needed to pro- gram a word or byte, instead of four. a status bit similar to data polling and a status bit toggling between con- secutive read cycles, provide feedback to the user as to the status of the programming operation. refer to write operation status, table 7, for more information on these status bits. automatic chip erase the entire chip is bulk erased using 10 ms erase pulses according to mxic's automatic chip erase algorithm. typical erasure at room temperature is accomplished in less than 25 second. the automatic erase algorithm automatically programs the entire array prior to electri- cal erase. the timing and verification of electrical erase are controlled internally within the device. automatic sector erase the mx29lv160t/b & mx29lv160at/ab is sector(s) erasable using mxic's auto sector erase algorithm. the automatic sector erase algorithm automatically pro- grams the specified sector(s) prior to electrical erase. the timing and verification of electrical erase are con- trolled internally within the device. an erase operation can erase one sector, multiple sectors, or the entire de- vice. automatic erase algorithm mxic's automatic erase algorithm requires the user to write commands to the command register using stan- dard microprocessor write timings. the device will auto- matically pre-program and verify the entire array. then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. a status bit toggling between consecu- tive read cycles provides feedback to the user as to the status of the erasing operation. register contents serve as inputs to an internal state- machine which controls the erase and programming cir- cuitry. during write cycles, the command register inter- nally latches address and data needed for the program- ming and erase operations. during a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of we or ce, whichever hap- pens first. mxic's flash technology combines years of eprom experience to produce the highest levels of quality, reli- ability, and cost effectiveness. the mx29lv160t/b & mx29lv160at/ab electrically erases all bits simulta- neously using fowler-nordheim tunneling. the bytes are programmed by using the eprom programming mecha- nism of hot electron injection. during a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. during a sector erase cycle, the command register will only respond to erase suspend command. after erase suspend is completed, the device stays in read mode. after the state machine has completed its task, it will allow the command regis- ter to respond to its full command set. automatic select the auto select mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on q7~q0. this mode is mainly adapted for programming equipment on the de- vice to be programmed with its programming algorithm. when programming by high voltage method, automatic select mode requires vid (11.5v to 12.5v) on address pin a9 and other address pin a6, a1 and a0 as referring to table 3. in addition, to access the automatic select codes in-system, the host can issue the automatic se-
7 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 a19 a11 a9 a8 a6 a5 a1 a0 description mode ce oe we reset | | | | q15~q0 a12 a10 a7 a2 read silicon id l l h h x x vid x l x l l c2h manufacture code read silicon id word l l h h x x vid x l x l h 22c4h (top boot block) byte l l h h x x vid x l x l h xxc4h device id word l l h h x x vid x l x l h 2249h (bottom boot block) byte l l h h x x vid x l x l h xx49h xx01h sector protection l l h h sa x vid x l x h l (protected) verification xx00h (unprotected) table 3. mx29lv160t/b & mx29lv160at/ab auto select mode bus operation (a9=vid) note: sa=sector address, x=don't care, l=logic low, h=logic high lect command through the command register without requiring vid, as shown in table 4. to verify whether or not sector being protected, the sec- tor address must appear on the appropriate highest or- der address bit (see table 1 and table 2). the rest of address bits, as shown in table 3, are don't care. once all necessary bits have been set as required, the pro- gramming equipment may read the corresponding iden- tifier code on q7~q0.
8 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 query command and common flash interface (cfi) mode ( for mx29lv160at/ ab) mx29lv160at/ab is capable of operating in the cfi mode. this mode all the host system to determine the manufacturer of the device such as operating param- eters and configuration. two commands are required in cfi mode. query command of cfi mode is placed first, then the reset command exits cfi mode. these are described in table 6. the single cycle query command is valid only when the device is in the read mode, including erase suspend, standby mode, and read id mode; however, it is ig- nored otherwise. the reset command exits from the cfi mode to the read mode, or erase suspend mode, or read id mode. the command is valid only when the device is in the cfi mode. table 4-1. cfi mode: identification data values (all values in these tables are in hexadecimal) description address address data (byte mode) (word mode) query-unique ascii string "qry" 20 10 0051 22 11 0052 24 12 0059 primary vendor command set and control interface id code 26 13 0002 28 14 0000 address for primary algorithm extended query table 2a 15 0040 2c 16 0000 alternate vendor command set and control interface id code (none) 2e 17 0000 30 18 0000 address for secondary algorithm extended query table (none) 32 19 0000 34 1a 0000 table 4-2. cfi mode: system interface data values (all values in these tables are in hexadecimal) description address address data (byte mode) (word mode) vcc supply, minimum (2.7v) 36 1b 0027 vcc supply, maximum (3.6v) 38 1c 0036 vpp supply, minimum (none) 3a 1d 0000 vpp supply, maximum (none) 3c 1e 0000 typical timeout for single word/byte write (2 n us) 3e 1f 0004 typical timeout for minimum size buffer write (2 n us) 40 20 0000 typical timeout for individual block erase (2 n ms) 42 21 000a typical timeout for full chip erase (2 n ms) 44 22 0000 maximum timeout for single word/byte write times (2 n x typ) 46 23 0005 maximum timeout for buffer write times (2 n x typ) 48 24 0000 maximum timeout for individual block erase times (2 n x typ) 4a 25 0004 maximum timeout for full chip erase times (not supported) 4c 26 0000
9 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 table 4-3. cfi mode: device geometry data values (all values in these tables are in hexadecimal) description address address data (byte mode) (word mode) device size (2 n bytes) 4e 27 0015 flash device interface code (refer to the cfi publication 100) 50 28 0002 52 29 0000 maximum number of bytes in multi-byte write (not supported) 54 2a 0000 56 2b 0000 number of erase block regions 58 2c 0004 erase block region 1 information (refer to the cfi publication 100) 5a 2d 0000 5c 2e 0000 5e 2f 0040 60 30 0000 erase block region 2 information 62 31 0001 64 32 0000 66 33 0020 68 34 0000 erase block region 3 information 6a 35 0000 6c 36 0000 6e 37 0080 70 38 0000 erase block region 4 information 72 39 001e 74 3a 0000 76 3b 0000 78 3c 0001 table 4-4. cfi mode: primary vendor-specific extended query data values (all values in these tables are in hexadecimal) description address address data (byte mode) (word mode) query-unique ascii string "pri" 80 40 0050 82 41 0052 84 42 0049 major version number, ascii 86 43 0031 minor version number, ascii 88 44 0030 address sensitive unlock (0=required, 1= not required) 8a 45 0000 erase suspend (2= to read and write) 8c 46 0002 sector protect (n= # of sectors/group) 8e 47 0001 temporary sector unprotect (1=supported) 90 48 0001 sector protect/unprotect scheme 92 49 0004 simultaneous r/w operation (0=not supported) 94 4a 0000 burst mode type (0=not supported) 96 4b 0000 page mode type (0=not supported) 98 4c 0000
10 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 in the improper sequence will reset the device to the read mode. table 5 defines the valid register command sequences. note that the erase suspend (b0h) and erase resume (30h) commands are valid only while the sector erase operation is in progress. command definitions device operations are selected by writing specific ad- dress and data sequences into the command register. writing incorrect address and data values or writing them first bus second bus third bus fourth bus fifth bus sixth bus command bus cycle cycle cycle cycle cycle cycle cycle addr data addr data addr data addr data addr data addr data reset 1 xxxh f0h read 1 ra rd read silicon id word 4 555h aah 2aah 55h 555h 90h adi ddi byte 4 aaah aah 555h 55h aaah 90h adi ddi sector protect word 4 555h aah 2aah 55h 555h 90h (sa) xx00h verify x02h xx01h byte 4 aaah aah 555h 55h aaah 90h (sa) 00h x04h 01h program word 4 555h aah 2aah 55h 555h a0h pa pd byte 4 aaah aah 555h 55h aaah a0h pa pd chip erase word 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h 555h 10h byte 6 aaah aah 555h 55h aaah 80h aaah aah 555h 55h aaah 10h sector erase word 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h sa 30h byte 6 aaah aah 555h 55h aaah 80h aaah aah 555h 55h sa 30h sector erase suspend 1 xxxh b0h sector erase resume 1 xxxh 30h cfi query (for word 1 555h 98 29lv160at/ab) byte aaah table 5. mx29lv160t/b & mx29lv160at/ab command definitions note: 1. adi = address of device identifier; a1=0, a0 = 0 for manufacturer code,a1=0, a0 = 1 for device code. a2-a18=do not care. (refer to table 3) ddi = data of device identifier : c2h for manufacture code, c4h/49h (x8) and 22c4h/2249h (x16) for device code. x = x can be vil or vih ra=address of memory location to be read. rd=data to be read at location ra. 2.pa = address of memory location to be programmed. pd = data to be programmed at location pa. sa = address of the sector to be erased. 3.the system should generate the following address patterns: 555h or 2aah to address a10~a0 in word mode/aaah or 555h to address a10~a-1 in byte mode. address bit a11~a19=x=don't care for all address commands except for program address (pa) and sector address (sa). write sequence may be initiated with a11~a19 in either state. 4. for sector protect verify operation: if read out data is 01h, it means the sector has been protected. if read out data is 0 0h, it means the sector is still not being protected. 5. any number of cfi data read cycles are permitted.
11 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 address q8~q15 description ce oe we reset a19 a10 a9 a8 a6 a5 a1 a0 q0~q7 byte byte a11 a7 a2 =vih =vil read l l h h ain dout dout =high z dq15=a-1 write l h l h ain din(3) din reset x x x l x high z high z high z temporary sector unlock x x x vid ain din din high z output disable l h h h x high z high z high z standby vcc x x vcc x high z high z high z 0.3v 0.3v sector protect l h l vid sa x x x l x h l din x x chip unprotect l h l vid x x x x h x h l din x x sector protection verify l l h h sa x vid x l x h l code(5) x x table 6. mx29lv160t/b & mx29lv160at/ab bus operation notes: 1. manufacturer and device codes may also be accessed via a command register write sequence. refer to table 4. 2. vid is the silicon-id-read high voltage, 11.5v to 12.5v. 3. refer to table 4 for valid data-in during a write operation. 4. x can be vil or vih. 5. code=00h/xx00h means unprotected. code=01h/xx01h means protected. 6. a19~a12=sector address for sector protect. 7.the sector protect and chip unprotect functions may also be implemented via programming equipment.
12 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 requirements for reading array data to read array data from the outputs, the system must drive the ce and oe pins to vil. ce is the power control and selects the device. oe is the output control and gates array data to the output pins. we should remain at vih. the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. write commands/command sequences to program data to the device or erase sectors of memory , the system must drive we and ce to vil, and oe to vih. the device features an unlock bypass mode to facilitate faster programming. once the device enters the unlock bypass mode, only two write cycles are required to program a byte, instead of four. the "byte program command sequence" section has details on programming data to the device using both standard and unlock bypass command sequences. an erase operation can erase one sector, multiple sectors , or the entire device. table indicates the address space that each sector occupies. a "sector address" consists of the address bits required to uniquely select a sector. the "writing specific address and data commands or sequences into the command register initiates device operations. table 1 defines the valid register command sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. after the system writes the "read silicon-id" and "sector protect verify" command sequence, the device enters the "read silicon-id" and "sector protect verify" mode. the system can then read "read silicon-id" and "sector protect verify" codes from the internal register (which is separate from the memory array) on q7-q0. standard read cycle timings apply in this mode. refer to the "read silicon-id" and "sector protect verify" mode and "read silicon-id" and "sector protect verify" command sequence section for more information. icc2 in the dc characteristics table represents the active current specification for the write mode. the "ac characteristics" section contains timing specification table and timing diagrams for write operations. standby mode when using both pins of ce and reset, the device enter cmos standby with both pins held at vcc 0.3v. if ce and reset are held at vih, but not within the range of vcc 0.3v, the device will still be in the standby mode, but the standby current will be larger. during auto algorithm operation, vcc active current (icc2) is required even ce = "h" until the operation is completed. the de- vice can be read with standard access time (tce) from either of these standby modes, before it is ready to read data. output disable with the oe input at a logic high level (vih), output from the devices are disabled. this will cause the output pins to be in a high impedance state. reset operation the reset pin provides a hardware method of resetting the device to reading array data. when the reset pin is driven low for at least a period of trp, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the reset pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity current is reduced for the duration of the reset pulse. when reset is held at vss 0.3v, the device draws cmos standby current (icc4). if reset is held at vil but not within vss 0.3v, the standby current will be greater.
13 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 read/reset command the read or reset operation is initiated by writing the read/reset command sequence into the command reg- ister. microprocessor read cycles retrieve array data. the device remains enabled for reads until the command register contents are altered. if program-fail or erase-fail happen, the write of f0h will reset the device to abort the operation. a valid com- mand must then be written to place the device in the desired state. silicon-id read command flash memories are intended for use in applications where the local cpu alters memory contents. as such, manu- facturer and device codes must be accessible while the device resides in the target system. prom program- mers typically access signature codes by raising a9 to a high voltage (vid). however, multiplexing high volt- age onto address lines is not generally desired system design practice. the mx29lv160t/b & mx29lv160at/ab contains a sili- con-id-read operation to supple traditional prom pro- gramming methodology. the operation is initiated by writing the read silicon id command sequence into the command register. following the command write, a read cycle with a1=vil, a0=vil retrieves the manufacturer code of c2h/00c2h. a read cycle with a1=vil, a0=vih returns the device code of c4h/22c4h for mx29lv160at, 49h/2249h for mx29lv160ab. the system must write the reset command to exit the "silicon-id read command" code. set-up automatic chip/sector erase commands chip erase is a six-bus cycle operation. there are two "unlock" write cycles. these are followed by writing the "set-up" command 80h. two more "unlock" write cy- cles are then followed by the chip erase command 10h or sector erase command 30h. the automatic chip erase does not require the device to be entirely pre-programmed prior to executing the au- tomatic chip erase. upon executing the automatic chip erase, the device will automatically program and verify the entire memory for an all-zero data pattern. when the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. the erase and verify operations are completed when the data on q7 is "1" at which time the device returns to the read mode. the system is not required to provide any control or timing during these operations. when using the automatic chip erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). if the erase operation was unsuccessful, the data on q5 is "1" (see table 8), indicating the erase operation exceed internal timing limit. the automatic erase begins on the rising edge of the last we or ce pulse, whichever happens first in the command sequence and terminates when either the data on q7 is "1" at which time the device returns to the read mode or the data on q6 stops toggling for two consecutive read cycles at which time the device re- turns to the read mode. the reset pin may be tied to system reset circuitry. a system reset would that also reset the flash memory, enabling the system to read the boot-up firmware from the flash memory. if reset is asserted during a program or erase operation, the ry/by pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tready (during embedded algorithms). the system can thus monitor ry/by to determine whether the reset operation is complete. if reset is asserted when a program or erase operation is completed within a time of tready (not during embedded algorithms). the system can read data trh after the reset pin returns to vih. refer to the ac characteristics tables for reset parameters and to figure 22 for the timing diagram.
14 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an automatic program or automatic erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase- suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see erase suspend/erase resume commands for more information on this mode. the system must issue the reset command to re-en- able the device for reading array data if q5 goes high, or while in the "read silicon-id" and "sector protect verify" mode. see the "reset command" section, next. reset command writing the reset command to the device resets the device to reading array data. address bits are don't care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an silicon id read command sequence. once in the silicon id read mode, the reset command must be written to return to reading array data (also applies to silicon id read during erase suspend). if q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). pins a0 a1 q15~q8 q7 q6 q5 q4 q3 q2 q1 q0 code(hex) manufacture code word vil vil 00h 1 1 0 0 0 0 1 0 00c2h byte vil vil x 1 1 0 0 0 0 1 0 c2h device code word vih vil 22h 1 1 0 0 0 1 0 0 22c4h for mx29lv160at byte vih vil x 1 1 0 0 0 1 0 0 c4h device code word vih vil 22h 0 1 0 0 1 0 0 1 2249h for mx29lv160ab byte vih vil x 0 1 0 0 1 0 0 1 49h sector protection word x vih x 0 0 0 0 0 0 0 1 01h (protected) verification byte x vih x 0 0 0 0 0 0 0 0 00h (unprotected) table 7. silicon id code
15 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 sector erase commands the automatic sector erase does not require the de- vice to be entirely pre-programmed prior to executing the automatic sector erase set-up command and au- tomatic sector erase command. upon executing the automatic sector erase command, the device will auto- matically program and verify the sector(s) memory for an all-zero data pattern. the system is not required to provide any control or timing during these operations. when the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. the erase and verify operations are complete when either the data on q7 is "1" at which time the de- vice returns to the read mode or the data on q6 stops toggling for two consecutive read cycles at which time the device returns to the read mode. the system is not required to provide any control or timing during these operations. when using the automatic sector erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). sector erase is a six-bus cycle operation. there are two "un- lock" write cycles. these are followed by writing the set-up command 80h. two more "unlock" write cycles are then followed by the sector erase command 30h. the sector address is latched on the falling edge of we or ce, whichever happens later, while the command (data) is latched on the rising edge of we or ce, which- ever happens first. sector addresses selected are loaded into internal register on the sixth falling edge of we or ce, whichever happens later. each successive sector load cycle started by the falling edge of we or ce, whichever happens later must begin within 50us from the rising edge of the preceding we or ce, which- ever happens first. otherwise, the loading period ends and internal auto sector erase cycle starts. (monitor q3 to determine if the sector erase timer window is still open, see section q3, sector erase timer.) any command other than sector erase (30h) or erase suspend (b0h) during the time-out period resets the device to read mode. erase suspend this command only has meaning while the state ma- chine is executing automatic sector erase operation, and therefore will only be responded during automatic sector erase operation. when the erase suspend com- mand is issued during the sector erase operation, the device requires a maximum 20us to suspend the sector erase operation. however, when the erase suspend com- mand is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. after this command has been executed, the command register will initiate erase suspend mode. the state machine will return to read mode automatically after suspend is ready. at this time, state machine only allows the command register to re- spond to erase resume, program data to , or read data from any sector not selected for erasure. the system can determine the status of the program operation using the q7 or q6 status bits, just as in the standard program operation. after an erase-suspend pro- gram operation is complete, the system can once again read array data within non-suspended sectors. erase resume this command will cause the command register to clear the suspend state and return back to sector erase mode but only if an erase suspend command was previously issued. erase resume will not have any effect in all other conditions. another erase suspend command can be written after the chip has resumed erasing. however, for mx29lv160t/b, a 10ms time delay must be required after the erase resume command, if the system imple- ments a endless erase suspend/resume loop, or the number of erase suspend/resume is exceeded 1024 times. the erase times will be expended if the erase behavior always be suspended. (please refer to mxic flash application note for details.) please note that the above 10ms time delay is not necessary for mx29lv160at/ab. word/byte program command sequence the device programs one byte of data for each program operation. the command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or timings. the device automatically generates the program pulses and verifies the programmed cell margin. table 4 shows the address and data requirements for the byte program command sequence.
16 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 when the embedded program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using q7, q6, or ry/by. see "write operation status" for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. note that a hardware reset immediately terminates the programming operation. the byte program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a "0" back to a "1". attempting to do so may halt the operation and set q5 to "1" , or cause the data polling algorithm to indicate the operation was successful. however, a succeeding read will show that the data is still "0". only erase operations can convert a "0" to a "1". write operation status the device provides several bits to determine the sta- tus of a write operation: q2, q3, q5, q6, q7, and ry/ by. table 8 and the following subsections describe the functions of these bits. q7, ry/by, and dq6 each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. q7: data polling the data polling bit, q7, indicates to the host system whether an automatic algorithm is in progress or com- pleted, or whether the device is in erase suspend. data polling is valid after the rising edge of the final we pulse in the program or erase command sequence. during the automatic program algorithm, the device out- puts on q7 the complement of the datum programmed to q7. this q7 status also applies to programming dur- ing erase suspend. when the automatic program algo- rithm is complete, the device outputs the datum pro- grammed to q7. the system must provide the program address to read valid status information on q7. if a pro- gram address falls within a protected sector, data poll- ing on q7 is active for approximately 1 us, then the de- vice returns to reading array data. during the automatic erase algorithm, data polling pro- duces a "0" on q7. when the automatic erase algo- rithm is complete, or if the device enters the erase sus- pend mode, data polling produces a "1" on q7. this is analogous to the complement/true datum output de- scribed for the automatic program algorithm: the erase function changes all the bits in a sector to "1" prior to this, the device outputs the "complement, or "0". the system must provide an address within any of the sec- tors selected for erasure to read valid status information on q7. after an erase command sequence is written, if all sec- tors selected for erasing are protected, data polling on q7 is active for approximately 100 us, then the device returns to reading array data. if not all selected sectors are protected, the automatic erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects q7 has changed from the complement to true data, it can read valid data at q7-q0 on the following read cycles. this is because q7 may change asynchronously with q0-q6 while output en- able (oe) is asserted low. ry/by:ready/busy the ry/by is a dedicated, open-drain output pin that indicates whether an automatic erase/program algorithm is in progress or complete. the ry/by status is valid after the rising edge of the final we or ce, whichever happens first, in the command sequence. since ry/by is an open-drain output, several ry/by pins can be tied together in parallel with a pull-up resistor to vcc. if the output is low (busy), the device is actively erasing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the de- vice is ready to read array data (including during the erase suspend mode), or is in the standby mode. table 8 shows the outputs for ry/by during write opera- tion. q6:toggle bit i toggle bit i on q6 indicates whether an automatic pro- gram or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode.
17 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 during an automatic program or erase algorithm opera- tion, successive read cycles to any address cause q6 to toggle. the system may use either oe or ce to con- trol the read cycles. when the operation is complete, q6 stops toggling. after an erase command sequence is written, if all sec- tors selected for erasing are protected, q6 toggles and returns to reading array data. if not all selected sectors are protected, the automatic erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use q6 and q2 together to determine whether a sector is actively erasing or is erase sus- pended. when the device is actively erasing (that is, the automatic erase algorithm is in progress), q6 toggling. when the device enters the erase suspend mode, q6 stops toggling. however, the system must also use q2 to determine which sectors are erasing or erase-sus- pended. alternatively, the system can use q7. if a program address falls within a protected sector, q6 toggles for approximately 2 us after the program com- mand sequence is written, then returns to reading array data. q6 also toggles during the erase-suspend-program mode, and stops toggling once the automatic program algo- rithm is complete. table 8 shows the outputs for toggle bit i on q6. q2:toggle bit ii the "toggle bit ii" on q2, when used with q6, indicates whether a particular sector is actively erasing (that is, the automatic erase algorithm is in process), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we or ce, whichever happens first, in the command sequence. q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe or ce to control the read cycles.) but q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. q6, by com- parison, indicates whether the device is actively eras- ing, or is in erase suspend, but cannot distinguish which sectors are selected for erasure. thus, both status bits are required for sectors and mode information. refer to table 7 to compare outputs for q2 and q6. reading toggle bits q6/ q2 whenever the system initially begins reading toggle bit status, it must read q7-q0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on q7-q0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the sys- tem also should note whether the value of q5 is high (see the section on q5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as q5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase op- eration. if it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that system initially determines that the toggle bit is toggling and q5 has not gone high. the system may continue to monitor the toggle bit and q5 through successive read cycles, determining the sta- tus as described in the previous paragraph. alterna- tively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. q5 exceeded timing limits q5 will indicate if the program or erase time has ex- ceeded the specified limits (internal pulse count). under these conditions q5 will produce a "1". this time-out condition indicates that the program or erase cycle was toggle bit i may be read at any address, and is valid after the rising edge of the final we or ce, whichever happens first, in the command sequence (prior to the program or erase operation), and during the sector time- out.
18 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 not successfully completed. data polling and toggle bit are the only operating functions of the device under this condition. if this time-out condition occurs during sector erase op- eration, it specifies that a particular sector is bad and it may not be reused. however, other sectors are still func- tional and may be used for the program or erase opera- tion. the device must be reset to use other sectors. write the reset command sequence to the device, and then execute program or erase command sequence. this allows the system to continue to use the other active sectors in the device. status q7 q6 q5 q3 q2 ry/by (note1) (note2) byte program in auto program algorithm q7 toggle 0 n/a no 0 toggle auto erase algorithm 0 toggle 0 1 toggle 0 erase suspend read 1 no 0 n/a toggle 1 (erase suspended sector) toggle in progress erase suspended mode erase suspend read data data data data data 1 (non-erase suspended sector) erase suspend program q7 toggle 0 n/a n/a 0 byte program in auto program algorithm q7 toggle 1 n/a no 0 toggle exceeded time limits auto erase algorithm 0 toggle 1 1 toggle 0 erase suspend program q7 toggle 1 n/a n/a 0 table 8. write operation status note: 1. q7 and q2 require a valid address when reading status information. refer to the appropriate subsection for further details. 2. q5 switches to '1' when an auto program or auto erase operation has exceeded the maximum timing limits. see "q5: exceeded timing limits " for more information. if this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or com- bination of sectors are bad. if this time-out condition occurs during the byte program- ming operation, it specifies that the entire sector con- taining that byte is bad and this sector may not be re- used, (other sectors are still functional and can be re- used). the time-out condition will not appear if a user tries to program a non blank location without erasing. please note that this is not a device failure condition since the device was incorrectly used.
19 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 pow er supply de coupling in order to reduce power switching effect, each device should have a 0.1uf ceramic capacitor connected be- tween its vcc and gnd. power-up sequence the mx29lv160t/b & mx29lv160at/ab powers up in the read only mode. in addition, the memory contents may only be altered after successful completion of the predefined command sequences. temporary sector unprotect this feature allows temporary unprotection of previously protected sector to change data in-system. the tempo- rary sector unprotect mode is activated by setting the reset pin to vid (11.5v-12.5v). during this mode, for- merly protected sectors can be programmed or erased as un-protected sector. once vid is remove from the reset pin. all the previously protected sectors are pro- tected again. q3 sector erase timer after the completion of the initial sector erase command sequence, the sector erase time-out will begin. q3 will remain low until the time-out is complete. data polling and toggle bit are valid after the initial sector erase com- mand sequence. if data polling or the toggle bit indicates the device has been written with a valid erase command, q3 may be used to determine if the sector erase timer window is still open. if q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by data polling or toggle bit. if q3 is low ("0"), the device will accept additional sector erase commands. to insure the com- mand has been accepted, the system software should check the status of q3 prior to and following each sub- sequent sector erase command. if q3 were high on the second status check, the command may not have been accepted. data protection the mx29lv160t/b & mx29lv160at/ab is designed to offer protection against accidental erasure or program- ming caused by spurious system level signals that may exist during power transition. during power up the de- vice automatically resets the state machine in the read mode. in addition, with its control register architecture, alteration of the memory contents only occurs after suc- cessful completion of specific command sequences. the device also incorporates several features to prevent in- advertent write cycles resulting from vcc power-up and power-down transition or system noise. write pulse "glitch" protection noise pulses of less than 5ns (typical) on ce or we will not initiate a write cycle. logical inhibit writing is inhibited by holding any one of oe = vil, ce = vih or we = vih. to initiate a write cycle ce and we must be a logical zero while oe is a logical one. sector protection the mx29lv160t/b & mx29lv160at/ab features hard- ware sector protection. this feature will disable both program and erase operations for these sectors pro- tected. to activate this mode, the programming equip- ment must force vid on address pin a9 and oe (sug- gest vid = 12v). programming of the protection cir- cuitry begins on the falling edge of the we pulse and is terminated on the rising edge. please refer to sector pro- tect algorithm and waveform. to verify programming of the protection circuitry, the pro- gramming equipment must force vid on address pin a9 ( with ce and oe at vil and we at vih). when a1=vih, a0=vil, a6=vil, it will produce a logical "1" code at device output q0 for a protected sector. otherwise the device will produce 00h for the unprotected sector. in this mode, the addresses, except for a1, are don't care. address locations with a1 = vil are reserved to read manufacturer and device codes. (read silicon id) it is also possible to determine if the sector is protected in the system by writing a read silicon id command. performing a read operation with a1=vih, it will produce
20 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 chip unprotect the mx29lv160t/b & mx29lv160at/abalso features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code. it is recommended to protect all sectors before activating chip unprotect mode. to activate this mode, the programming equipment must force vid on control pin oe and address pin a9. the ce pins must be set at vil. pins a6 must be set to vih. refer to chip unprotect algorithm and waveform for the chip unprotect algorithm. the unprotection mechanism begins on the falling edge of the we pulse and is terminated on the rising edge. it is also possible to determine if the chip is unprotected in the system by writing the read silicon id command. performing a read operation with a1=vih, it will produce 00h at data outputs(q0-q7) for an unprotected sector. it is noted that all sectors are unprotected after the chip unprotect algorithm is completed. a logical "1" at q0 for the protected sector. the system must write the reset command to exit the "silicon-id read command" code.
21 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . ..... -65 o c to +150 o c ambient temperature with power applied. . . . . . . . . . . . . .... -65 o c to +125 o c voltage with respect to ground vcc (note 1) . . . . . . . . . . . . . . . . . -0.5 v to +4.0 v a9, oe, and reset (note 2) . . . . . . . . . . . ....-0.5 v to +12.5 v all other pins (note 1) . . . . . . . -0.5 v to vcc +0.5 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is -0.5 v. during voltage transitions, input or i/o pins may over- shoot vss to -2.0 v for periods of up to 20 ns. see figure 6. maximum dc voltage on input or i/o pins is vcc +0.5 v. during voltage transitions, input or i/o pins may overshoot to vcc +2.0 v for periods up to 20 ns. 2. minimum dc input voltage on pins a9, oe, and reset is -0.5 v. during voltage transitions, a9, oe, and reset may overshoot vss to -2.0 v for periods of up to 20 ns. see figure 6. maximum dc input volt- age on pin a9 is +12.5 v which may overshoot to 14.0 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those in- dicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maxi- mum rating conditions for extended periods may affect device reliability. operating ratings commercial (c) devices ambient temperature (t a ). . . . . . . . . . . . 0 c to +70 c industrial (i) devices ambient temperature (t a ). . . . . . . . . . -40 c to +85 c v cc supply voltages v cc for regulated voltage range . . . . . +3.0 v to 3.6 v v cc for full voltage range. . . . . . . . . . . +2.7 v to 3.6 v operating ranges define those limits between which the functionality of the device is guaranteed.
22 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 capacitance ta = 25 o c, f = 1.0 mhz symbol p arameter min. typ max. unit conditions cin1 input capacitance 8 pf vin = 0v cin2 control pin capacitance 12 pf vin = 0v cout output capacitance 12 pf vout = 0v notes: 1. vil min. = -1.0v for pulse width is equal to or less than 50 ns. vil min. = -2.0v for pulse width is equal to or less than 20 ns. 2. vih max. = vcc + 1.5v for pulse width is equal to or less than 20 ns if vih is over the specified maximum value, read operation cannot be guaranteed. 3. automatic sleep mode enable the low power mode when addresses remain stable for tacc +30ns. read operation symbol p arameter min. typ max. unit conditions ili input leakage current 1 ua vin = vss to vcc ilit a9 input leakage current 35 ua vcc=vcc max; a9=12.5v ilo output leakage current 1 ua vout = vss to vcc, vcc=vcc max icc1 vcc active read current 9 16 ma ce=vil, oe=vih @5mhz 2 4 ma (byte mode) @1mhz 9 16 ma ce=vil, oe=vih @5mhz 2 4 ma (word mode) @1mhz icc2 vcc active write currect 20 30 ma ce=vil, oe=vih icc3 vcc standby currect 0.2 5 ua ce; reset=vcc 0.3v icc4 vcc standby currect 0.2 5 ua reset=vss 0.3v during reset (see conditions) icc5 automatic sleep mode 0.2 5 ua vih=vcc 0.3v;vil=vss 0.3v vil input low voltage (note 1) -0.5 0.8 v vih input high voltage 0.7xvcc vcc+ 0.3 v vid voltage for automatic select and temporary 11.5 12.5 v vcc=3.3v sector unprotect vol output low voltage 0.45 v iol = 4.0ma, vcc= vcc min voh1 output high voltage (ttl) 0.85xvcc ioh = - 2ma, vcc=vcc min voh2 output high voltage vcc-0.4 ioh = -100ua, vcc min (cmos) vlko low vcc lock-out 2.3 2.5 v voltage table 9. dc characteristics ta = -40 o c to 85 o c, vcc = 3v 10% (vcc=3.0~3.6v for mx29lv160t/b & mx29lv160at/ab-70r, mx29lv160t/b & mx29lv160at/ab-90r)
23 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 29l v160a t/b-70 29l v160a t/b-70r (note3) symbol p arameter min. max. min. max. unit conditions trc read cycle time (note 1) 70 70 ns tacc address to output delay 70 70 ns ce=oe=vil tce ce to output delay 70 70 ns oe=vil toe oe to output delay 30 30 ns ce=vil tdf oe high to output float (note2) 0 25 0 25 ns ce=vil toeh output enable read 0 0 ns hold time toggle and data polling 10 10 ns toh address to output hold 0 0 ns ce=oe=vil note: 1. not 100% tested. 2. tdf is defined as the time at which the output achieves the open circuit condition and data is no longer driven. 3. 29lv160at/b-70r & 29lv160at/b-90r operates at vcc=3.0~3.6v. test conditions: ? input pulse levels: 0v/3.0v. ? input rise and fall times is equal to or less than 5ns. ? output load: 1 ttl gate + 100pf (including scope and jig), for 29lv160at/b-90. 1 ttl gate + 30pf (including scope and jig) for 29lv160at/b-70 and 29lv160at/b- 70r. ? reference levels for measuring timing: 1.5v. ac characteristics ta = -40 o c to 85 o c, vcc = 2.7v~3.6v (vcc=3.0~3.6v for mx29lv160t/ b & mx29lv160at/ab-70r, mx29lv160t/b & mx29lv160at/ab-90r) table 10. read operations 29l v160a t/b-90 29l v160a t/b-90r (note3) symbol p arameter min. max. min. max. unit conditions trc read cycle time (note 1) 90 90 ns tacc address to output delay 90 90 ns ce=oe=vil tce ce to output delay 90 90 ns oe=vil toe oe to output delay 35 35 ns ce=vil tdf oe high to output float (note2) 0 30 0 30 ns ce=vil toeh output enable read 0 0 ns hold time toggle and data polling 10 10 ns toh address to output hold 0 0 ns ce=oe=vil
24 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 switching test circuits switching test waveforms test points 3.0v 0v ac testing: inputs are driven at 3.0v for a logic "1" and 0v for a logic "0". input pulse rise and fall times are < 5ns. output input device under test diodes=in3064 or equivalent cl 6.2k ohm 2.7k ohm +3.3v cl=100pf including jig capacitance
25 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 1. read timing waveforms addresses ce oe tacc we vih vil vih vil vih vil vih vil voh vol vih vil high z high z data valid toe toeh tdf tce tacc trc outputs reset toh add valid
26 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 29lv160at/b-70(r) 29lv160at/b-90(r) symbol parameter min. max. min. max. unit twc write cycle time (note 1) 70 90 ns tas address setup time 0 0 ns tah address hold time 45 45 ns tds data setup time 35 45 ns tdh data hold time 0 0 ns toes output enable setup time 0 0 ns tghwl read recovery time before write 0 0 ns (oe high to we low) tcs ce setup time 0 0 ns tch ce hold time 0 0 ns twp write pulse width 35 35 ns twph write pulse width high 30 30 ns twhwh1 programming operation (note 2) 9/11(typ.) 9/11(typ.) us (byte/word program time) twhwh2 sector erase operation (note 2) 0.7(typ.) 0.7(typ.) sec tvcs vcc setup time (note 1) 50 50 us trb recovery time from ry/by 0 0 ns tbusy sector erase valid to ry/by delay 90 90 ns chip erase valid to ry/by delay 90 90 ns program valid to ry/by delay 90 90 ns twpp1 write pulse width for sector 100ns 10us(typ.) 100ns 10us(typ.) protect (a9, oe control) twpp2 write pulse width for sector 100ns 12ms(typ.) 100ns 12ms(typ.) unprotect (a9, oe control) notes: 1. not 100% tested. 2. see the "erase and programming performance" section for more information. table 11. erase/program operations ac characteristics ta = -40 o c to 85 o c, vcc = 2.7v~3.6v (vcc=3.0~3.6v for mx29lv160t/ b & mx29lv160at/ab-70r, mx29lv160t/b & mx29lv160at/ab-90r)
27 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 29l v160a t/b-70(r) 29l v160a t/b-90(r) symbol parameter min. max. min. max. unit twc write cycle time (note 1) 70 90 ns tas address setup time 0 0 ns tah address hold time 45 45 ns tds data setup time 35 45 ns tdh data hold time 0 0 ns toes output enable setup time 0 0 ns tghel read recovery time before write 0 0 ns tws we setup time 0 0 ns twh we hold time 0 0 ns tcp ce pulse width 35 35 ns tcph ce pulse width high 30 30 ns twhwh1 programming byte 9(typ.) 9(typ.) us operation(note2) word 11(typ.) 11(typ.) us twhwh2 sector erase operation (note2) 0.7(typ.) 0.7(typ.) sec note: 1. not 100% tested. 2. see the "erase and programming performance" section for more information. ac characteristics ta = -40 o c to 85 o c, vcc = 2.7v~3.6v (vcc=3.0~3.6v for mx29lv160t/ b & mx29lv160at/ab-70r, mx29lv160t/b & mx29lv160at/ab-90r) table 12. alternate ce controlled erase/program operations
28 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 2. command write timing waveform addresses ce oe we din tds tah data tdh tcs tch tcwc twph twp toes tas vcc 3v vih vil vih vil vih vil vih vil vih vil add valid
29 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 automatic programming timing waveform figure 3. automatic programming timing waveform one byte data is programmed. verify in fast algorithm and additional verification by external control are not re- quired because these operations are executed automati- cally by internal control circuit. programming comple- tion can be verified by data polling or toggle bit check- ing after automatic programming starts. device outputs data during programming and data after programming on q7.(q6 is for toggle bit; see toggle bit, data polling, timing waveform) twc address oe ce a0h 555h pa pd status dout pa pa notes: 1.pa=program address, pd=program data, dout is the true data the program address tas tah tghwl tch twp tds tdh twhwh1 read status data (last two cycle) program command sequence(last two cycle) tbusy trb tcs twph tvcs we data ry/by vcc
30 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 4. automatic programming algorithm flowchart start write data aah address 555h write data 55h address 2aah write program data/address write data a0h address 555h yes verify word ok ? yes auto program completed data poll from system increment address last address ? no no
31 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 5. ce controlled program timing waveform twc twh tghel twhwh1 or 2 tcp address we oe ce data dq7 pa data polling dout reset ry/by notes: 1.pa=program address, pd=program data, dout=data out, dq7=complement of data written to device. 2.figure indicates the last two bus cycles of the command sequence. tah tas pa for program sa for sector erase 555 for chip erase trh tdh tds tws a0 for program 55 for erase tcph tbusy pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase
32 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 all data in chip are erased. external erase verification is not required because data is verified automatically by internal control circuit. erasure completion can be veri- fied by data polling or toggle bit checking after auto- matic erase starts. device outputs 0 during erasure and 1 after erasure on q7. (q6 is for toggle bit; see toggle bit, data polling, timing waveform) figure 6. automatic chip erase timing waveform automatic chip erase timing waveform twc address oe ce 55h 2aah 555h 10h in progress complete va va notes: sa=sector address(for sector erase), va=valid address for reading status data(see "write operation status"). tas tah tghwl tch twp tds tdh twhwh2 read status data erase command sequence(last two cycle) tbusy trb tcs twph tvcs we data ry/by vcc
33 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 7. automatic chip erase algorithm flowchart start write data aah address 555h write data 55h address 2aah write data aah address 555h write data 80h address 555h yes no data=ffh ? write data 10h address 555h write data 55h address 2aah data poll from system auto chip erase completed
34 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 8. automatic sector erase timing waveform sector indicated by a12 to a19 are erased. external erase verify is not required because data are verified automatically by internal control circuit. erasure comple- tion can be verified by data polling or toggle bit check- ing after automatic erase starts. device outputs 0 dur- ing erasure and 1 after erasure on q7. (q6 is for toggle bit; see toggle bit, data polling, timing waveform) automatic sector erase timing waveform twc address oe ce 55h 2aah sa 30h in progress complete va va notes: sa=sector address(for sector erase), va=valid address for reading status data(see "write operation status"). tas tah tghwl tch twp tds tdh twhwh2 read status data erase command sequence(last two cycle) tbusy trb tcs twph tvcs we data ry/by vcc
35 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 9. automatic sector erase algorithm flowchart start write data aah address 555h write data 55h address 2aah write data aah address 555h write data 80h address 555h write data 30h sector address write data 55h address 2aah data poll from system auto sector erase completed no last sector to erase yes yes no data=ffh
36 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 10. erase suspend/erase resume flowchart start write data b0h toggle bit checking q6 not toggled erase suspend yes no write data 30h delay 10ms (note) continue erase reading or programming end read array or program another erase suspend ? no yes yes no erase resume note: it's only for a certain condition of mx29lv160t/b. if the system implements an endless erase suspend/resume loop, or the number of erase suspend/resume is exceeded 1024 times, then the 10ms time delay must be put into consideration. please note that the 10ms time delay is not necessary for mx29lv160at/ab.
37 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 11. in-system sector protect/unprotect timing waveform (reset control) sector protect =150us sector unprotect =15ms 1us vid vih data sa, a6 a1, a0 ce we oe valid* valid* status valid* sector protect or sector unprotect 40h 60h 60h verify reset note: when sector protect, a6=0, a1=1, a0=0. when sector unprotect, a6=1, a1=1, a0=0.
38 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 12. sector protect timing waveform (a9, oe control) toe data oe we 12v 5v 12v 5v ce a9 a1 a6 toesp twpp 1 tvlht tvlht tvlht verify 01h f0h a19-a12 sector address
39 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 13. sector protection algorithm (a9, oe control) start set up sector addr plscnt=1 sector protection complete data=01h? ye s . oe=vid,a9=vid,ce=vil a6=vil activate we pulse time out 150us set we=vih, ce=oe=vil a9 should remain vid read from sector addr=sa, a1=1 protect another sector? remove vid from a9 write reset command device failed plscnt=32? ye s no no
40 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 14. in-system sector protection algorithm with reset=vid start plscnt=1 first write cycle=60h ye s no reset=vid wait 1us set up sector address write 60h to sector address with a6=0, a1=1, a0=0 verify sector protect : write 40h with a6=0, a1=1, a0=0 wait 150us increment plscnt read from sector address remove vid from reset temporary sector unprotect mode reset plscnt=1 data=01h ye s ye s ye s no no no ? plscnt=25? protect another sector? write reset command sector protect complete device failed
41 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 15. in-system sector unprotection algorithm with reset=vid start plscnt=1 first write cycle=60h ? ye s no reset=vid wait 1us set up first sector address sector unprotect : write 60h with a6=1, a1=1, a0=0 verify sector unprotect write 40h to sector address with a6=1, a1=1, a0=0 wait 50ms increment plscnt read from sector address with a6=1, a1=1, a0=0 remove vid from reset temporary sector unprotect mode set up next sector address all sector protected? ye s data=00h ye s ye s ye s no no no no protect all sectors ? plscnt=1000? last sector verified? write reset command sector unprotect complete device failed
42 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 16. timing waveform for chip unprotection (a9, oe control) notes: tvlht (voltage transition time)=4us min. twpp1 (write pulse width for sector protect)=100ns min. twpp2 (write pulse width for sector unprotect)=100ns min. toesp (oe setup time to we active)=4us min. toe data oe we 12v vcc 3v 12v vcc 3v ce a9 a1 toesp twpp 2 tvlht tvlht tvlht verify 00h a6 sector address a19-a12 f0h
43 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 17. chip unprotection algorithm (a9, oe control) start protect all sectors plscnt=1 chip unprotect complete data=00h? ye s set oe=a9=vid ce=vil,a6=1 activate we pulse time out 50ms set oe=ce=vil a9=vid,a1=1 set up first sector addr all sectors have been verified? remove vid from a9 write reset command device failed plscnt=1000? no increment plscnt no read data from device ye s ye s no increment sector addr * it is recommended before unprotect whole chip, all sectors should be protected in advance.
44 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 18. data polling algorithm read q7~q0 add.=va(1) read q7~q0 add.=va start q7 = data ? q5 = 1 ? q7 = data ? fail pass no no (2) no ye s ye s ye s note : 1.va=valid address for programming 2.q7 should be re-checked even q5="1" because q7 may change simultaneously with q5. write operation status
45 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 19. toggle bit algorithm read q7-q0 read q7-q0 q5= 1? read q7~q0 twice program/erase operation not complete,write reset command program/erase operation complete toggle bit q6= toggle? toggle bit q6 = toggle ? no (note 1) (note 1,2) yes no no yes yes note:1.read toggle bit twice to determine whether or not it is toggling. 2. recheck toggle bit because it may stop toggling as q5 change to "1". start
46 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 20. data polling timings (during automatic algorithms) ry/by notes: va=valid address. figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle . tdf tce tacc trc tch toe toeh toh tbusy address ce oe we dq7 q0-q6 status data status data complement complement valid data tr u e va va va high z high z valid data tr u e
47 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 notes: va=valid address; not required for q6. figure shows first two status cycle after command sequence, last status read cycle, and array data read cycle. tdf tce tacc trc tch toe toeh tbusy high z toh address ce oe we q6/q2 ry/by valid status (first raed) valid status (second read) (stops toggling) valid data va va va va valid data figure 21. toggle bit timing waveforms (during automatic algorithms)
48 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 22. reset timing waveform table 13. ac characteristics parameter std description test setup all speed options unit tready1 reset pin low (during automatic algorithms) max 20 us to read or write (see note) tready2 reset pin low (not dur ing automatic max 500 ns algorithms) to read or write (see note) trp reset pulse width (during automatic algorithms) min 500 ns trh reset high time before read (see note) min 50 ns trb ry/by recovery time (to ce, oe go low) min 0 ns note:not 100% tested trh trb tready1 trp trp tready2 ry/by ce, oe reset reset timing not during automatic algorithms reset timing during automatic algorithms ry/by ce, oe reset
49 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 23. byte timing waveform for read operations (byte switching from byte mode to word mode) tfhqv telfh dout (q0-q7) dout (q0-q14) va dout (q15) ce oe byte q0~q14 q15/a-1 ac characteristics word/byte configuration (byte) parameter description speed options unit jedec std -70 (r) -90 (r) telfl/telfh ce to byte switching low or high max 5 ns tflqz byte switching low to output high z max 25 30 ns tfhqv byte switching high to output active min 70 90 ns
50 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 24. byte timing waveform for read operations (byte switching from word mode to byte mode) figure 25. byte timing waveform for program operations tas tah the falling edge of the last we signal ce we byte tflqz telfh dout (q0-q7) dout (q0-q14) va dout (q15) ce oe byte q0~q14 q15/a-1
51 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 table 14. temporary sector unprotect parameter std. description test setup all speed options unit tvidr vid rise and fall time (see note) min 500 ns trsp reset setup time for temporary sector unprotect min 4 us note: not 100% tested figure 26. temporary sector unprotect timing diagram reset ce we ry/by tvidr tvidr program or erase command sequence 12v 0 or vcc 0 or vcc trsp figure 27. q6 vs q2 for erase and erase suspend operations notes: the system can use oe or ce to toggle q2/q6, q2 toggles only when read at an address within an erase-suspended we enter embedded erasing erase suspend enter erase suspend program erase suspend program erase suspend read erase erase resume erase complete erase q6 q2
52 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 28. temporary sector unprotect algorithm start reset = vid (note 1) perform erase or program operation reset = vih temporary sector unprotect completed(note 2) operation completed 2. all previously protected sectors are protected again. note : 1. all protected sectors are temporary unprotected. vid=11.5v~12.5v
53 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 figure 29. id code read timing waveform tacc tce tacc toe toh toh tdf data out c2h/00c2h c4h/49h (byte) 22c4h/2249h (word) vid vih vil add a9 add a2-a8 a10-a19 ce oe we add a0 data out data q0-q15 vcc a1 3v vih vil vih vil vih vil vih vil vih vil vih vil vih vil
54 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 min. max. input voltage with respect to gnd on all pins except i/o pins -1.0v 12.5v input voltage with respect to gnd on all i/o pins -1.0v vcc + 1.0v current -100ma +100ma includes all pins except vcc. test conditions: vcc = 3.0v, one pin at a time. limits parameter min. typ.(2) max.(3) units sector erase time 0.7 15 sec chip erase time 25 sec byte programming time 9 300 us word programming time 11 360 us chip programming time byte mode 18 54 sec word mode 12 36 sec erase/program cycles 100,000 cycles latchup characteristics erase and programming performance (1) note: 1.not 100% tested, excludes external system level over head. 2.typical values measured at 25 c, 3v. 3.maximum values measured at 25 c, 2.7v.
55 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 part no. access time operating current standby current package (ns) max.(ma) max.(ua) mx29lv160tmc-70 70 30 5 44 pin sop mx29lv160bmc-70 70 30 5 44 pin sop mx29lv160tmc-90 90 30 5 44 pin sop mx29lv160bmc-90 90 30 5 44 pin sop mx29lv160ttc-70 70 30 5 48 pin tsop (normal type) mx29lv160btc-70 70 30 5 48 pin tsop (normal type) mx29lv160ttc-90 90 30 5 48 pin tsop (normal type) mx29lv160btc-90 90 30 5 48 pin tsop (normal type) mx29lv160tti-70 70 30 5 48 pin tsop (normal type) mx29lv160bti-70 70 30 5 48 pin tsop (normal type) mx29lv160tti-90 90 30 5 48 pin tsop (normal type) mx29lv160bti-90 90 30 5 48 pin tsop (normal type) mx29lv160ttc-70r 70 30 5 48 pin tsop (normal type) mx29lv160btc-70r 70 30 5 48 pin tsop (normal type) mx29lv160tti-70r 70 30 5 48 pin tsop (normal type) mx29lv160bti-70r 70 30 5 48 pin tsop (normal type) mx29lv160ttc-90r 90 30 5 48 pin tsop (normal type) mx29lv160btc-90r 90 30 5 48 pin tsop (normal type) mx29lv160tti-90r 90 30 5 48 pin tsop (normal type) mx29lv160bti-90r 90 30 5 48 pin tsop (normal type) ordering information
56 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 part no. access time operating current standby current package (ns) max.(ma) max.(ua) mx29lv160txbc-70 70 30 5 48 ball csp mx29lv160bxbc-70 70 30 5 48 ball csp mx29lv160txbc-90 90 30 5 48 ball csp mx29lv160bxbc-90 90 30 5 48 ball csp mx29lv160txbc-70r 70 30 5 48 ball csp mx29lv160bxbc-70r 70 30 5 48 ball csp mx29lv160txbc-90r 90 30 5 48 ball csp mx29lv160bxbc-90r 90 30 5 48 ball csp mx29lv160txbi-70 70 30 5 48 ball csp mx29lv160bxbi-70 70 30 5 48 ball csp mx29lv160txbi-90 90 30 5 48 ball csp mx29lv160bxbi-90 90 30 5 48 ball csp mx29lv160txbi-70r 70 30 5 48 ball csp mx29lv160bxbi-70r 70 30 5 48 ball csp mx29lv160txbi-90r 90 30 5 48 ball csp mx29lv160bxbi-90r 90 30 5 48 ball csp
57 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 part no. access time operating current standby current package (ns) max.(ma) max.(ua) mx29lv160atmc-70 70 30 5 44 pin sop mx29lv160abmc-70 70 30 5 44 pin sop mx29lv160atmc-90 90 30 5 44 pin sop mx29lv160abmc-90 90 30 5 44 pin sop mx29lv160attc-70 70 30 5 48 pin tsop (normal type) mx29lv160abtc-70 70 30 5 48 pin tsop (normal type) mx29lv160attc-90 90 30 5 48 pin tsop (normal type) mx29lv160abtc-90 90 30 5 48 pin tsop (normal type) mx29lv160atti-70 70 30 5 48 pin tsop (normal type) mx29lv160abti-70 70 30 5 48 pin tsop (normal type) mx29lv160atti-90 90 30 5 48 pin tsop (normal type) mx29lv160abti-90 90 30 5 48 pin tsop (normal type) mx29lv160attc-70r 70 30 5 48 pin tsop (normal type) mx29lv160abtc-70r 70 30 5 48 pin tsop (normal type) mx29lv160atti-70r 70 30 5 48 pin tsop (normal type) mx29lv160abti-70r 70 30 5 48 pin tsop (normal type) mx29lv160attc-90r 90 30 5 48 pin tsop (normal type) mx29lv160abtc-90r 90 30 5 48 pin tsop (normal type) mx29lv160atti-90r 90 30 5 48 pin tsop (normal type) mx29lv160abti-90r 90 30 5 48 pin tsop (normal type)
58 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 part no. access time operating current standby current package (ns) max.(ma) max.(ua) mx29lv160atxbc-70 70 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbc-70 70 30 5 48 ball csp (ball size:0.3mm) mx29lv160atxec-70 70 30 5 48 ball csp (ball size:0.4mm) mx29lv160abxec-70 70 30 5 48 ball csp (ball size:0.4mm) mx29lv160atxbc-90 90 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbc-90 90 30 5 48 ball csp (ball size:0.3mm) mx29lv160atxec-90 90 30 5 48 ball csp (ball size:0.4mm) mx29lv160abxec-90 90 30 5 48 ball csp (ball size:0.4mm) mx29lv160atxbc-70r 70 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbc-70r 70 30 5 48 ball csp (ball size:0.3mm) MX29LV160ATXBC-90R 90 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbc-90r 90 30 5 48 ball csp (ball size:0.3mm) mx29lv160atxbi-70 70 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbi-70 70 30 5 48 ball csp (ball size:0.3mm) mx29lv160atxei-70 70 30 5 48 ball csp (ball size:0.4mm) mx29lv160abxei-70 70 30 5 48 ball csp (ball size:0.4mm) mx29lv160atxbi-90 90 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbi-90 90 30 5 48 ball csp (ball size:0.3mm) mx29lv160atxei-90 90 30 5 48 ball csp (ball size:0.4mm)
59 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 part no. access time operating current standby current package (ns) max.(ma) max.(ua) mx29lv160abxei-90 90 30 5 48 ball csp (ball size:0.4mm) mx29lv160atxbi-70r 70 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbi-70r 70 30 5 48 ball csp (ball size:0.3mm) mx29lv160atxbi-90r 90 30 5 48 ball csp (ball size:0.3mm) mx29lv160abxbi-90r 90 30 5 48 ball csp (ball size:0.3mm)
60 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 package information 48-pin plastic tsop
61 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 44-pin plastic sop
62 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 48-ball csp (for mx29lv160atxbc/atxbi/abxbc/abxbi)
63 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 48-ball csp (for mx29lv160txbc/txbi/bxbc/bxbi)
64 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 48-ball csp (for mx29lv160atxec/atxei/abxec/abxei)
65 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 revision history revision no. description page date (mx29lv160at/ab) 0.1 mis-typing:table 4-3 device gemetry data values p9 nov/15/2001 1) device size: data=0015h 2) erase block region 1 information: data=0000h for byte address=5a, word address=2d data=0040h for byte address=5e, word address=2f data=0000h for byte address=60, word address=30 0.2 added 48-ball csp package p1,2,56,59 dec/11/2001 0.3 1.modify ordering information p56 dec/28/2001 2.add 48-ball csp package information for mx29lv160atxec/txei p60 dec/28/2001 /bxec/bxbi) (mx29lv160t/b) 1.1 changed dq-->q p2,6,7,9,21,22 apr/05/2000 modify toggle bit i-->ii p13 modify ambient operating temperature 0 c to 70 c p15 1.2 correct type error p8 apr/17/2000 modify dc characteristics vcc=5v 10%-->vcc=3v 10% p16 1.3 modify timing waveform for chip unprotection 5v-->3v p33 may/08/2000 1.4 1.add "table 8" for read operation, dc characteristics p19 jun/05/2000 2.add "table 9" for read operation, ac characteristics p20 3.add & modify "table 10" for erase/program operation, p23 ac characteristics 4.add "table 11" for alternate ce controlled erase/program p24 operations 5.modify automatic programming timing waveform, automatic p26,27 programming algorithm flowchart 6.add ce controlled programming timing waveform p28 8.add write operation status for data polling & toggle bit p39,40,41 algorithm and timing waveform 9.add q6 vs q2 for erase and erase suspend operation p44 1.5 modify feature--10,000 minimum erase/program cycles-->100,000-- p1 jun/28/2000 modify general description--even after 10,000 --->100,000 erase-- p1 1.6 modify erase/program cycles(min.) 10,000-->100,000 p47 aug/25/2000 1.7 correct content error p13,14,19,30 sep/14/2000 add title description p34,37 add sector protect timing waveform p35 add sector protection algorithm p36 1.8 add ac characteristics-- 29lv160t/b-70r p20 nov/09/2000 add ordering information p50 1.9 add ac characteristics table10 & table11-- 29lv160t/b-70r p23,24 nov/16/2000 2.0 delete unlock bypass command definitions p8 jan/04/2001 delete unlock bypass command sequence p14 2.1 add ordering information--48 ball csp p50 jan/16/2001 2.2 to corrected the naming of reset pin from rp to reset p2 jan/30/2001 2.3 modify timing waveform p27,29,30,32 feb/07/2001 modify automatic programming algorithm flowchart p28 delete figure 21. toggle bit timings(during embedded algorithms) p45 add figure 19. toggle bit algorithm p43 modify absolute maximum ratings p19
66 p/n:pm0866 mx29lv160t/b & mx29lv160at/ab rev. 3.3, mar. 08, 2002 rev. no. description page date 2.4 change tbusy spec. from 90ns to 90us p24 mar/07/2001 2.5 correct typing error p23,2 jul/03/2001 twpp1/twpp2 was changed to 100ns p40 to modify package information p52~54 2.6 separate the tbusy spec: tbusy:90us for sector erase p24 jul/05/2001 tbusy:90ns for chip erase ; tbusy:90ns for program 2.7 correct typing error p24 jul/10/2001 2.8 add mx29lv161t/b part number all jul/24/2001 mx29lv160t/b tbusy=90ns at sector erase mode p24 mx29lv161t/b tbusy=90us at sector erase mode p24 2.9 1.separate data sheet into two files:mx29lv160t/b & mx29lv161t/b all sep/24/2001 2.tbusy spec was changed from 90ns min. to 90ns max. p24 3.add twpp1/twpp2 typical spec p24 4.add word/byte switching spec and waveform p47,48 5.add 90r speed grade p21,24,51 6.the expression of 48-ball csp pin configuration was changed from p2 "top view, ball facing up" to "top view, ball facing down" (the physical pin out is not changed, just a different expression.) 7.correct mistyping - byte/word program:7us/12us-->9us/11us p1,24 - sector size of word mode 16k words/8k words/32k words/64k words p4 --->8k words/4k words/16k words/32k words - ta of extended devices was removed p19 - icc4 condition: reset=vcc 0.3v --> reset=vss 0.3v p20 - ta=0 c to 70 c -->ta=-40 c to 85 c p20,21,24 - add a19~a12 into figure p35,41 3.0 wording change of sector erase commands p11,13,27,30 oct/17/2001 p32 (mx29lv160t/b & mx29lv160at/ab) 3.1 1.combinded mx29lv160at/ab & mx29lv160t/b datasheet to be all jan/11/2001 together 2.the system must write "reset" command to exit "silicon-id read p12-14,19 mode" & "sector protection verification" mode 3.2 1.add 10ms time delay for erase suspend/resume p15,36 mar/01/2002 3.3 1.correct typing error p1,2,7,10,11 mar/08/2002 13,14,16,17,51
mx29lv160t/b & mx29lv160at/ab m acronix i nternational c o., l td. headquarters: tel:+886-3-578-6688 fax:+886-3-563-2888 europe office: tel:+32-2-456-8020 fax:+32-2-456-8021 japan office: tel:+81-44-246-9100 fax:+81-44-246-9105 singapore office: tel:+65-348-8385 fax:+65-348-8096 taipei office: tel:+886-2-2509-3300 fax:+886-2-2509-2200 m acronix a merica, i nc. tel:+1-408-453-8088 fax:+1-408-453-8488 chicago office: tel:+1-847-963-1900 fax:+1-847-963-1909 http : //www.macronix.com macronix international co., ltd. reserves the right to change product and specifications without notice.

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